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HS-303CEH - Radiation Hardened BiCMOS Dual SPDT Analog Switch

General Description

The HS-303CEH is an analog switch and a monolithic device that is fabricated using the Renesas dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to ensure latch-up free operation.

The HS-303CEH is pinout compatible and functionally equivalent to the HS-303RH.

Key Features

  • Qualified & Screened to DLA SMD 5962-95813.
  • No latch-up, dielectrically isolated device islands.
  • Pinout and functionally compatible with the HS-303RH series of analog switches.
  • Analog signal range equal to the supply voltage range.
  • Low leakage: 150nA (max, post-rad).
  • Low rON: 60Ω (max, post-rad).
  • Low standby supply current: ±150µA (max, post-rad).
  • TID Rad Hard Assurance (RHA) wafer-by-wafer testing.
  • HDR (50rad(Si)/s to 300rad(Si)/s): 100krad(Si).

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📁 Similar Datasheet

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Other Datasheets by Intersil (now Renesas)

Part Number Description
HS-303AEH Radiation Hardened CMOS Dual SPDT Analog Switch
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HS-303CEH Radiation Hardened BiCMOS Dual SPDT Analog Switch Datasheet Description The HS-303CEH is an analog switch and a monolithic device that is fabricated using the Renesas dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to ensure latch-up free operation. The HS-303CEH is pinout compatible and functionally equivalent to the HS-303RH. The HS-303CEH offers low-resistance switching performance for analog voltages up to the supply rails. ON-resistance is low and stays reasonably constant across the full range of operating voltage and current. ON-resistance also stays reasonably constant when exposed to radiation. Break-before-make switching is controlled by 5V digital inputs. The HS-303CEH can operate with ±15V rails.