DESCRIPTION
The current sourcing output stage is an NPN capable of 6A. An SCR provides over 30A of current sinking. The HV400MJ/883 achieves rise and fall times of 54ns and 16ns respectively driving a 10,000pF load. Special features are included in this part to provide a simple, high speed gate drive circuit for power MOSFETs. The HV400MJ/883 requires no quiescent supply current, however, the input current is approximately 15mA while in the high state. With the internal current steering diodes (Pin 7) and an external capacitor, both the timing and MOSFET gate power come from the same pulse transformer; no special external supply is required for high side switches. No high voltage diode is required to charge the bootstrap capacitor. The HV400MJ/883 in combination with the MOSFET and pulse transformer makes an isolated power switch building block for applications such as high side switches, secondary side regulation and synchronous rectification. The HV400MJ/883 is also suitable for driving IGBTs, MCTs, BJTs and small GTOs.
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