Intersil IRF231
This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.| Part No. | IRF231 |
|---|---|
| Datasheet | IRF231 Download |
| Manufacturer |  Intersil |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17412. October 1997FEATURES
● 8.0A and 9.0A, 150V and 200V● rDS(ON) = 0.4Ω and 0.6Ω
● Single Pulse Avalanche Energy Rated
● SOA is Power Dissipation Limited
● Nanosecond Switching Speeds
● Linear Transfer Characteristics
● High Input Impedance
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRF230 IRF231 IRF232 IRF233 PACKAGE TO-204AA TO-204AA TO-204AA TO-204AA BRAND IRF230 IRF231 IRF232 IRF233 G S NOTE: When ordering, use the entire part number.
