Intersil IRFD220
N-Channel Power MOSFET
FEATURES
● 0.8A, 200V● rDS(ON) = 0.800Ω
● Single Pulse Avalanche Energy Rated
● SOA is Power Dissipation Limited
● Nanosecond Switching Speeds
● Linear Transfer Characteristics
● High Input Impedance
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFD220 PACKAGE HEXDIP BRAND IRFD220 Symbol D NOTE: When ordering, use the entire part number. G S Packaging HEXDIP DRAIN GATE SOURCE 4-287 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFD220
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specified IRFD220 200 200 0.8 6.4 ±20 1.0 0.008 85 -55 to 150 300 260 UNITS V V A A V W W/oC mJ oC oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . .