Intersil IRFD9220
P-Channel Power MOSFET
FEATURES
● 0.6A, 200V● rDS(ON) = 1.500Ω
● Single Pulse Avalanche Energy Rated
● SOA is Power Dissipation Limited
● Nanosecond Switching Speeds
● Linear Transfer Characteristics
● High Input Impedance Symbol D Ordering Information PART NUMBER IRFD9220 PACKAGE HEXDIP BRAND IRFD9220 G S NOTE: When ordering, use the entire part number. Packaging HEXDIP DRAIN GATE SOURCE 4-51 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFD9220
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specified IRFD9220 -200 -200 -0.6 -4.8 ±20 1.0 0.008 290 -55 to 150 300 260 UNITS V V A A V W W/oC mJ oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .