Intersil IRFP350
N-Channel Power MOSFET
FEATURES
● 16A, 400V● rDS(ON) = 0.300Ω
● Single Pulse Avalanche Energy Rated
● SOA is Power Dissipation Limited
● Nanosecond Switching Speeds
● Linear Transfer Characteristics
● High Input Impedance
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFP350 PACKAGE TO-247 BRAND IRFP350 Symbol D NOTE: When ordering, include the entire part number. G S Packaging JEDEC STYLE TO-247 TOP VIEW SOURCE DRAIN GATE DRAIN (FLANGE) 4-335 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. or 407-727-9207 | Copyright © Intersil Corporation 1999 DataSheet 4 U .com 4U.com IRFP350
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specified IRFP350 400 400 16 10 64 ±20 180 1.44 700 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .