IRFR9110 Description
IRFR9110, IRFU9110 Data Sheet July 1999 File Number 4001.3 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate power field-effect transistors designed for applications such as switching regulators, switching converters,...
IRFR9110 Key Features
- 3.1A, 100V
- rDS(ON) = 1.200Ω
- Temperature pensating PSPICE™ Model
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”