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ISL73033SLHM - Radiation Hardened Driver-GaN Power Stage

General Description

3.

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Key Features

  • Undervoltage Lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps the GaN FET in an OFF state whenever VDRV is below the UVLO threshold. The ISL73033SLHM inputs can withstand voltages up to 14.7V regardless of the VDD voltage, allowing the inputs to be connected directly to most PWM controllers. The ISL73033SLHM is offered in an 81 ball 8x8mm Ball Grid Array (BGA) package. Features.
  • Production testing and qualification follow the standard AS6294/1.
  • 100V, 7.5mΩ eGaN FET.

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Other Datasheets by Intersil (now Renesas)

Part Number Description
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ISL73020SEH 65A Enhancement Mode GaN Power Transistors
ISL73023SEH 60A Enhancement Mode GaN Power Transistor
ISL73024SEH 7.5A Enhancement Mode GaN Power Transistor
ISL73040SEH Radiation Hardened Low-Side GaN FET Driver
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Datasheet ISL73033SLHM Radiation Hardened Driver-GaN Power Stage with 100V GaN FET The ISL73033SLHM is a radiation hardened Driver-GaN power stage with a 4.5V gate driver and a 100V, 7.5mΩ enhancement-mode Gallium Nitride (GaN) FET in one package. The device simplifies the PCB layout by integrating a driver plus GaN FET in one package and is designed for isolated topologies and boost type configurations. The driver operates with a supply voltage from 4.5V to 13.2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The ISL73033SLHM has a 4.