Intersil JANSR2N7440
Formerly Available as FSS913A0R4/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs
| Part No. | JANSR2N7440 |
|---|---|
| Datasheet | JANSR2N7440 Download |
| Manufacturer |  Intersil |
| Description | Formerly Available as FSS913A0R4/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
| Buy | Stock & Price |
FEATURES
● 10A, -100V, rDS(ON) = 0.280Ω● Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
● Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
● Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM
● Photo Current - 1.5nA Per-RAD(Si)/s Typically
● Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2 Symbol D G S Packaging TO-257AA S Ordering Information PART NUMBER JANSR2N7440 PACKAGE TO-257AA BRAND JANSR2N7440 D G Die Family TA17796. MIL-PRF-19500/659. CAUTION: Beryllia Warning per MIL-S-19500 refer to package specifications. 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 JANSR2N7440
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Spe...
