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MCTV35P60F1D - 35A / 600V P-Type MOS Controlled Thyristor

General Description

The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an insulated MOS gate.

It is designed for use in motor controls, inverters, line switches and other power switching applications.

Key Features

  • 35A, -600V.
  • VTM = -1.35V (Max) at I = 35A and +150oC.
  • 800A Surge Current Capability.
  • 800A/µs di/dt Capability.
  • MOS Insulated Gate Control.
  • 50A Gate Turn-Off Capability at +150oC.
  • Anti-Parallel Diode A A K GR G.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Semiconductor MCTV35P60F1D P-Type MOS Controlled with Anti-Parallel Diode Package JEDEC STYLE TO-247 April 1999 PROCE S AWN NS 35A, 600V ITHDR DESIG PART W E - NO NEW Thyristor (MCT) OLET S OBS Features • 35A, -600V • VTM = -1.35V (Max) at I = 35A and +150oC • 800A Surge Current Capability • 800A/µs di/dt Capability • MOS Insulated Gate Control • 50A Gate Turn-Off Capability at +150oC • Anti-Parallel Diode A A K GR G Description The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an insulated MOS gate. It is designed for use in motor controls, inverters, line switches and other power switching applications. The MCT is especially suited for resonant (zero voltage or zero current switching) applications.