Intersil RF1K49211
The RF1K49211 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low-voltage bus switches.FEATURES
● 7A, 12V● rDS(ON) = 0.020Ω
● Temperature Compensating PSPICE® Model
● Peak Current vs Pulse Width Curve
● UIS Rating Curve
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol NC(1) DRAIN(8) Ordering Information PART NUMBER RF1K49211 PACKAGE MS-012AA BRAND RF1K49211 SOURCE(2) DRAIN(7) NOTE: When ordering, use the entire part number. For ordering in tape and reel, add the suffix 96 to the part number, i.e., RF1K4921196. SOURCE(3) DRAIN(6) GATE(4) DRAIN(5) Packaging JEDEC MS-012AA BRANDING DASH 5 1 2 3 4 8-129 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. LittleFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation. or 407-727-9207 | Copyright © Intersil Corporation 1999 RF1K49211
ABSOLUTE MAXIMUM RATINGS
TA = 25oC Unless Otherwise Specified RF1K49211 12 12 ±10 7 Refer to Peak Current Curve Refer to UIS Curve 2 0.016 -55 to 150 300 260 UNITS V V V A Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .