Intersil RF1S45N03LSM
This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers.| Part No. | RF1S45N03LSM |
|---|---|
| Datasheet | RF1S45N03LSM Download |
| Manufacturer |  Intersil |
| Description | 45A/ 30V/ 0.022 Ohm/ Logic Level/ N-Channel Power MOSFETs |
| Buy | Stock & Price |
DESCRIPTION
These are N-Channel power MOSFETs manufactured using the MegaFET process. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49030. September 1998FEATURES
● 45A, 30V● rDS(ON) = 0.022Ω
● Temperature Compensating PSPICE Model
● Can be Driven Directly from CMOS, NMOS, and TTL Circuits
● Peak Current vs Pulse Width Curve
● UIS Rating Curve
● 175oC Operating Temperature
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFP45 N03L, RF1S45 N03L, RF1S45 N03LS M) /Subject (45A, 30V, 0.022 Ohm, Symbol D Ordering Information PART NUMBER RFP45N03L RF1S45N03L RF1S45N03LSM PACKAGE TO-220AB TO-262AA TO-263AB BRAND FP45N03L F45N03L F45N03L S G NOTE: When ordering, use the entire part number. Add the suffix 9A, to obtain the TO-263AB variant in tape and reel, e.g., RF1S45N03LSM9A. Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) DRAIN (FLANGE) JEDEC TO-262AA SOURCE DRAIN GATE JEDEC TO-263AB DRAIN (FLANGE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge.
