Intersil RF1S4N100SM
4.3A/ 1000V/ 3.500 Ohm/ High Voltage/ N-Channel Power MOSFETs
| Part No. | RF1S4N100SM |
|---|---|
| Datasheet | RF1S4N100SM Download |
| Manufacturer |  Intersil |
| Description | 4.3A/ 1000V/ 3.500 Ohm/ High Voltage/ N-Channel Power MOSFETs |
| Buy | Stock & Price |
FEATURES
● 4.3A, 1000V● rDS(ON) = 3.500Ω
● UIS Rating Curve (Single Pulse)
● -55oC to 150oC Operating Temperature
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFP4N100 RF1S4N100SM PACKAGE TO-220AB TO-263AB BRAND RFP4N100 F1S4N100 G S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE JEDEC TO-263AB DRAIN (FLANGE) 4-528 CAUTION: These devices are sensitive to electrostatic discharge; follow properS ESD Handling Procedures. or 407-727-9207 | Copyright © Intersil Corporation 1999 RFP4N100, RF1S4N100SM
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specified RFP4N100, RF1S4N100SM Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
