Intersil RFD20N03
The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers.| Part No. | RFD20N03 |
|---|---|
| Datasheet | RFD20N03 Download |
| Manufacturer |  Intersil |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● 20A, 30V● rDS(ON) = 0.025Ω
● Temperature Compensating PSPICE® Model
● Thermal Impedance SPICE Model
● Peak Current vs Pulse Width Curve
● UIS Rating Curve
● 175oC Operating Temperature
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFD20N03 RFD20N03SM PACKAGE TO-251AA TO-252AA BRAND F20N03 F20N03 Symbol D NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in tape and reel, e.g., RFD20N03SM9A. G S Packaging JEDEC TO-251AA JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) 4-427 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE® is a registered trademark of MicroSim Corporation. or 407-727-9207 | Copyright © Intersil Corporation 1999 RFD20N03, RFD20N03SM
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specified 30 30 ±20 20 Figure 5 Figure 6 90 0.60 -55 to 175 300 260 UNITS V V V A Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
