Intersil RFD3N08LSM
The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages.| Part No. | RFD3N08LSM |
|---|---|
| Datasheet | RFD3N08LSM Download |
| Manufacturer |  Intersil |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● 3A, 80V● rDS(ON) = 0.800Ω
● Temperature Compensating PSPICE® Model
● On Resistance vs Gate Drive Voltage Curves
● Peak Current vs Pulse Width Curve
● UIS Rating Curve
● 175oC Operating Temperature
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” BRAND Ordering Information PART NUMBER RFD3N08L RFD3N08LSM PACKAGE TO-251AA TO-252AA F3N08L F3N08L Symbol D NOTE: When ordering, include the entire part number. Add the suffix 9A to obtain the TO-252AA variant in tape and reel, i.e. RFD3N08LSM9A G S Packaging JEDEC TO-251AA SOURCE DRAIN GATE GATE SOURCE JEDEC TO-252AA DRAIN (FLANGE) DRAIN (FLANGE) 6-26 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE® is a registered trademark of MicroSim Corporation. or 407-727-9207 | Copyright © Intersil Corporation 1999 RFD3N08L, RFD3N08LSM
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specified RFD3N08L, RFD3N08LSM 80 80 ±10 3 Refer to Peak Current Curve 30 0.2 Refer to UIS Curve -55 to 175 300 260 UNITS V V V A W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . .
