Intersil RFF60P06
The RFF60P06 P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers.| Part No. | RFF60P06 |
|---|---|
| Datasheet | RFF60P06 Download |
| Manufacturer |  Intersil |
| Description | P-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● 25A, 60V● rDS(ON) = 0.030Ω
● Temperature Compensating PSPICE® Model
● Peak Current vs Pulse Width Curve
● UIS Rating Curve
● 150oC Operating Temperature
● Reliability Screened Symbol D G Ordering Information PART NUMBER RFF60P06 PACKAGE TO-254AA BRAND RFF60P06 S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-254AA GATE SOURCE DRAIN PACKAGE TAB (ISOLATED) CAUTION: Berylia Warning per MIL-S-19500. Refer to package specifications. 4-181 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE® is a registered trademark of MicroSim Corporation. or 407-727-9207 | Copyright © Intersil Corporation 1999. RFF60P06
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specified RFF60P06 -60 -60 ±20 25 (Note 5) Refer to Peak Current Curve Refer to UIS Curve 125 1.0 -55 to 150 260 UNITS V V V A Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
