Intersil RFF70N06
The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers.| Part No. | RFF70N06 |
|---|---|
| Datasheet | RFF70N06 Download |
| Manufacturer |  Intersil |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● 25A†, 60V● rDS(ON) = 0.025Ω
● Temperature Compensating PSPICE™ Model
● Peak Current vs Pulse Width Curve
● UIS Rating Curve
● 150oC Operating Temperature
● Reliability Screened † Current is limited by the package capability. Symbol D Ordering Information PART NUMBER RFF70N06 PACKAGE TO-254AA BRAND RFF70N06 G S NOTE: When ordering, use the entire part number. Commercial Version: RFG70N06. Packaging JEDEC TO-254AA GATE SOURCE DRAIN PACKAGE TAB (ISOLATED) CAUTION: Berylia Warning per MIL-S-19500. Refer to package specifications. 4-442 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE™ is a trademark of MicroSim Corporation. or 407-727-9207 | Copyright © Intersil Corporation 1999 RFF70N06
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
