Intersil RFL1N12L
This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages.| Part No. | RFL1N12L |
|---|---|
| Datasheet | RFL1N12L Download |
| Manufacturer |  Intersil |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. Formerly developmental type TA09528. September 1998FEATURES
● 1A, 120V and 150V● rDS(ON) = 1.900Ω [ /Title (RFL1N 12L, RFL1N1 5L) /Subject (1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, Logic Level, N-Channel Power MOSFETs, TO205AF) Ordering Information PART NUMBER RFL1N12L RFL1N15L PACKAGE TO-205AF TO-205AF BRAND RFL1N12L RFL1N15L NOTE: When ordering, use the entire part number. Symbol D G S Packaging JEDEC TO-205AF DRAIN (CASE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 File Number 1513.2 7-1 RFL1N12L, RFL1N15L
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specified RFL1N12L Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
