Intersil RFL2N06L
The RFL2N06L N-channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.| Part No. | RFL2N06L |
|---|---|
| Datasheet | RFL2N06L Download |
| Manufacturer |  Intersil |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● 2A, 50V and 60V● rDS(ON) = 0.950Ω
● Design Optimized for 5V Gate Drives
● Can be Driven from QMOS, NMOS, TTL Circuits
● Compatible with Automotive Drive Requirements
● SOA is Power Dissipation Limited
● Nanosecond Switching Speeds
● Linear Transfer Characteristics Ordering Information PART NUMBER RFL2N06L PACKAGE TO-205AF BRAND RFL2N06L
● High Input Impedance
● Majority Carrier Device NOTE: When ordering, use the entire part number. Symbol D G S Packaging JEDEC TO-205AF DRAIN (CASE) SOURCE GATE 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. or 407-727-9207 | Copyright © Intersil Corporation 1999 RFL2N06L
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specified RFL2N06L Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
