Intersil RFM10N45
This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.| Part No. | RFM10N45 |
|---|---|
| Datasheet | RFM10N45 Download |
| Manufacturer |  Intersil |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17435. September 1998FEATURES
● 10A, 450V and 500V● rDS(ON) = 0.600Ω [ /Title (RFM10 N45, RFM10 N50) /Subject (10A, 450V and 500V, 0.600 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdfmark Ordering Information PART NUMBER RFM10N45 RFM10N50 PACKAGE TO-204AA TO-204AA BRAND RFM10N45 RFM10N50 NOTE: When ordering, include the entire part number. Symbol D G S Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) [ /PageMode CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
