• Part: CTS20MS
  • Description: Radiation Hardened Dual 4-Input NAND Gate
  • Manufacturer: Intersil
  • Size: 132.27 KB
Download CTS20MS Datasheet PDF
CTS20MS page 2
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CTS20MS page 3
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Datasheet Summary

HCTS20MS September 1995 Radiation Hardened Dual 4-Input NAND Gate Pinouts 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-183S CDIP2-T14 TOP VIEW A1 1 B1 2 NC 3 C1 4 D1 5 Y1 6 14 VCC 13 D2 12 C2 11 NC 10 B2 9 A2 8 Y2 Features - 3 Micron Radiation Hardened SOS CMOS - Total Dose 200K RAD (Si) - SEP Effective LET No Upsets: >100 MEV-cm2/mg - Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) - Dose Rate Survivability: >1 x 1012 RAD (Si)/s - Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse - Latch-Up Free Under Any Conditions - Military Temperature Range: -55 oC to +125oC GND 7 - Significant Power Reduction pared to LSTTL ICs - DC Operating Voltage Range: 4.5V...