Datasheet Summary
Data Sheet February 2000 File Number 4783.1
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT5A40N60A4D is a MOS gated high voltage switching device bining the best Features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49347. The diode used in anti-parallel is the development type 49374. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are...