Datasheet Summary
April 1995
32A, 600V N-Channel IGBT
Package
JEDEC MO-093AA (5 LEAD TO-218)
5 EMITTER COLLECTOR (FLANGE) 4 EMITTER KELVIN 3 COLLECTOR 2 NO CONNECTION 1 GATE
Features
- 32A, 600V
- Latch Free Operation
- Typical Fall Time 620ns
- High Input Impedance
- Low Conduction Loss
Description
The IGBT is a MOS gated high voltage switching device bining the best Features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. IGBTs are ideal for many high voltage switching applications operating at...