HGTD3N60A4S Datasheet | Intersil

HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 Data Sheet January 2000 File Number 4825 600V, SMPS Series N-Channel IGBT The HGTD3N60A4S, HGT1S3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices bining the best Features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly...