Datasheet Summary
HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S
March 1997
6A, 400V and 500V N-Channel IGBTs
Packages
HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)
Features
- 6A, 400V and 500V
- VCE(ON): 2.5V Max.
- TFALL: 1.0µs
- Low On-State Voltage
- Fast Switching Speeds
- High Input Impedance
Applications
- Power Supplies
- Motor Drives
- Protective Circuits
HGTD6N40E1S, HGTD6N50E1S JEDEC TO-252AA
COLLECTOR (FLANGE)
GATE EMITTER
Description
The HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, and HGTD6N50E1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and...