Datasheet Summary
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
April 1995
20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
Packages
JEDEC TO-220AB
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)
Features
- Logic Level Gate Drive
- Internal Voltage Clamp
- ESD Gate Protection
- TJ = 175oC
- Ignition Energy Capable
Description
This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique Features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate....
