Datasheet Summary
RFP4N100, RF1S4N100SM
Data Sheet August 1999 File Number
4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs
The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from an integrated circuit. Formerly developmental type TA09850.
Features
- 4.3A, 1000V
- rDS(ON) = 3.500Ω
- UIS Rating Curve (Single Pulse)
- -55oC to 150oC Operating Temperature
- Related Literature
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