RFD3N08 Datasheet | Intersil

RFD3N08L, RFD3N08LSM Data Sheet July 1999 File Number 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is acplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09922. Features - 3A, 80V - rDS(ON) = 0.800Ω -...