RFH25P10 Datasheet | Intersil

Semiconductor RFH25P08, RFH25P10, RFK25P08, RFK25P10 -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs Description These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA49230. BRAND RFH25P08 RFH25P10 RFK25P08 RFK25P10 September 1998 Features - -25A, -100V and -80V - rDS(ON) = 0.150Ω - Related Literature - TB334 “Guidelines for Soldering Surface Mount...