Datasheet Summary
RFP22N10, RF1S22N10SM
Data Sheet July 1999 File Number
22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs
These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA9845.
Features
- 22A, 100V
- rDS(ON) = 0.080Ω
- UIS SOA Rating Curve (Single Pulse)
- SOA is Power Dissipation Limited
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