Datasheet Summary
Data Sheet August 1999 File Number
2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET
This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49158.
Features
- 2.0A, 60V
- rDS(ON) = 0.150Ω
- 2kV ESD Protected
- Temperature pensating PSPICE® Model
- Thermal...