RFW2N06RLE Datasheet | Intersil

Data Sheet July 1999 File Number 2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET The RFW2N06RLE N-Channel, logic level, ESD protected, power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. The RFW2N06RLE was designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor and relay drivers and emitter switches for bipolar transistors. This performance is acplished through a special gate...