Invensys ASDX030
This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.| Part No. | ASDX030 |
|---|---|
| Datasheet | ASDX030 Download |
| Manufacturer |  Invensys |
| Description | 0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT |
| Buy | Stock & Price |
FEATURES
● 650 V @ TJ = 150°C● Typ. RDS(on) = 36 mΩ
● Ultra Low Gate Charge (Typ. Qg = 277 nC)
● Low Effective Output Capacitance (Typ. Coss(eff.) = 748 pF)
● 100% Avalanche Tested
● RoHS Compliant
DESCRIPTION
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. D G G D S TO-247 SABSOLUTE MAXIMUM RATINGS
TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Ene...
