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ASDX030 - 0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT

Download the ASDX030 datasheet PDF. This datasheet also covers the ASDXxxx variant, as both devices belong to the same 0 to 1 psi through 0 to 100 psi pressure transducers sensym ict family and are provided as variant models within a single manufacturer datasheet.

General Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Key Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 36 mΩ.
  • Ultra Low Gate Charge (Typ. Qg = 277 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 748 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ASDXxxx_ETC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ASDX030
Manufacturer Invensys
File Size 104.43 KB
Description 0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT
Datasheet download datasheet ASDX030 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FCH041N60F — N-Channel SuperFET® II FRFET® MOSFET December 2013 FCH041N60F N-Channel SuperFET® II FRFET® MOSFET 600 V, 76 A, 41 mΩ Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 36 mΩ • Ultra Low Gate Charge (Typ. Qg = 277 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 748 pF) • 100% Avalanche Tested • RoHS Compliant Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.