2SA2167 Overview
ISAHAYA ELECTRONICS CORPORATION 2SA2167 FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE TYPICAL CHARACTERISTICS DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT COLLECTOR TO EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT -1000 COLLECTOR TO EMITTER SATURATION VOLTAGE VCE(sat)[mV] Ta=25℃ VCE=-6V Ta=25℃ IC/IB=20/1.