Datasheet Summary
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ISAHAYA ELECTRONICS CORPORATION
FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
TYPICAL CHARACTERISTICS
DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT COLLECTOR TO EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT -1000 COLLECTOR TO EMITTER SATURATION VOLTAGE VCE(sat)[mV]
Ta=25℃ VCE=-6V Ta=25℃ IC/IB=20/1
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DC FORWARD CURRENT GAIN hFE
-100
-10
1 -1 -10 -100 -1000 COLLECTOR CURRENT IC[mA] -10000
-1 -1 -10 -100 -1000 COLLECTOR CURRENT IC[mA] -10000
GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT 1000
Ta=25℃ VCE=-2V
COLLECTOR OUTPUT CAPATITANCE VS. COLLECTOR TO BASE VOLTAGE 100 COLLECTOR OUTPUT CAPACITANCE...