Datasheet4U Logo Datasheet4U.com

2SA1365 - SILICON PNP EPITAXIAL TYPE TRANSISTOR

General Description

transistor designed with high collector current,small Vce(sat).

Complementary with 2SC3440.

Low collector to emitter saturation voltage.

Ex

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
〈SMALL-SIGNAL TRANSISTOR〉 2SA1365 FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING 2SA1365 is a super mini silicon PNP epitaxial type 2.8 transistor designed with high collector current,small Vce(sat). 0.65 1.5 0.65 Complementary with 2SC3440. Unit:mm 2.8 1.90 0.95 0.95 0.4 FEATURE ●Low collector to emitter saturation voltage. VCE(sat)=-0.2V typ ●Excellent linearity of DC forward current gain. ●Super mini package for easy mounting. ●High collector current ICM=-1A ●High gain band width product fT=180MHz typ ① ② ③ 1.1 0.8 0~0.1 0.13 APPLICATION Small type motor drive, relay drive, power supply.