2SA1365
2SA1365 is SILICON PNP EPITAXIAL TYPE TRANSISTOR manufactured by Isahaya Electronics Corporation.
DESCRIPTION
OUTLINE DRAWING
2SA1365 is a super mini silicon PNP epitaxial type
2.8 transistor designed with high collector current,small Vce(sat).
0.65 1.5 0.65 plementary with 2SC3440.
Unit：ｍｍ
2.8 1.90 0.95 0.95
FEATURE
- Low collector to emitter saturation voltage. VCE(sat)=-0.2V typ
- Excellent linearity of DC forward current gain.
- Super mini package for easy mounting.
- High collector current ICM=-1A
- High gain band width product f T=180MHz typ
①
②
③
1.1 0.8 0～0.1 0.13
APPLICATION
Small type motor drive, relay drive, power supply.
JEITA：SC-59 JEDEC：Similar to TO-236
MAXIMUM RATINGS（Ta=25℃）
TERMINAL CONNECTER ①：BASE ②：EMITTER ③：COLLECTOR
Parameter
Symbol
Ratings
Unit
Collector to Base voltage
VCBO
Emitter to Base voltage
VEBO
Collector to Emitter voltage
VCEO
Peak Collector current
I CM
Collector current
Collector dissipation
(Ta=25℃)...
