2SA1369 Datasheet | Isahaya Electronics Corporation

DESCRIPTION 2SA1369 is a silicon PNP epitaxial type transistor designed with high collector dissipation and high collector current, high h FE. plementary with 2SC3439. OUTLINE DRAWING 4.4 1.6 UNIT：ｍｍ FEATURE - High h FE h FE=400～800 - High collector current IC=-1.5A,ICM=-3A - Small collector to emitter saturation voltage VCE(sat)=-0.25V type（@IC=-1A/IB=-20m A） - High collector dissipation PC=500m W - Small package for easy mounting 1.0 2.5 3.9 ③②① 0.5 0.4 1.5 3.0 0.4 MARKING APPLICATION Small type motor drive for VTR, tape deck, player, drive for relay TERMINAL CONNECTOR ①：BASE ②：COLLECTOR ③：EMITTER JEITA：SC-62 JEDEC：SOT-89 MAXIMUM RATING（Ta=25℃） SYMBOL PARAMETER VCBO Collector to Base voltage VEBO Emitter to Base voltage VCEO Collector to Emitter voltage Collector current Peak collector current Collector dissipation(Ta=25℃) Tj Junction temperature Tstg Storage temperature ELECTRICAL CHARACTERISTICS（Ta=25℃） SYMBOL...