INC2002AM1-T150
FEATURE
- Small package for easy mounting.
- High reverse h FE
- Small collector to emitter saturation voltage.
VCE(sat)=40m V(TYP.) (@IC=50m A/IB=2.5m A)
- Low On-Resistance
RON=0.65Ω(TYP.) (@IB=5m A)
APPLICATION muting circuit , switching circuit
2.0 1.3 0.65 0.65
FOR MUTING APPLICATION Silicon NPN Epitaxial Type
AEC-Q101 pliance
OUTLINE DRAWING
UNIT：mm
2.1 0.425 1.25 0.425
①
②
③
0.9 0.7 0～0.1 0.15
Terminal Connector ①：Base ②：Emitter ③：Collector
JEITA：SC-70 JEDEC：－
MAXIMUM RATING（Ta=25℃）
SYMBOL
PARAMETER
VCBO Collector to Base voltage
VCEO Collector to Emitter voltage
VEBO Emitter to Base voltage
Collector current
PC Collector dissipation
Tj
Junction temperature
Tstg Storage temperature
RATING 50 20 50 600 200 +150
-55～+150
UNIT V V V m A m W ℃ ℃
MARKING
XW- type name
ELECTRICAL CHARACTERISTICS（Ta=25℃）
SYMBOL
PARAMETER...
