INC6001AP1
DESCRIPTION
INC6001AP1 is a silicon NPN transistor. It is designed with high voltage.
FEATURE
- Small package for easy mounting.
- High voltage VCEO =100V
- High collector current Ic=1A
- Low saturation voltage VCE(sat) = 0.5V(MAX)
APPLICATION
DC/DC converter, Power supply
1.0 2.5 3.9
<SMALL-SIGNAL TRANSISTOR>
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
4.4 1.6
UNIT：ｍｍ
③②①
0.5 0.4
1.5 3.0
0.4 MARKING
TERMINAL CONNECTOR ①：BASE ②：COLLECTOR ③：EMITTER
JEITA：SC-62 JEDEC：SOT-89
MAXIMUM RATING（Ta=25℃）
SYMBOL VCBO VEBO VCEO IC PC Tj Tstg
PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature
RATING 120 6 100 1 500 ＋150
-55～＋150
UNIT V V V A m W ℃ ℃
ELECTRICAL CHARACTERISTICS（Ta=25℃）
SYMBOL
PARAMETER
TEST CONDITIONS
V(BR)CBO V(BR)EBO V(BR)CEO
ICBO IEBO h FE VCE(sat) f T Cob
C to B breakdown voltage E to B...
