INC6008AC1
DESCRIPTION
INC6008AC1 is a silicon NPN epitaxial type transistor. It is designed with high collector current and small VCE(sat).
FEATURE
- Super mini package for easy mounting
- High collector current(IC=1A)
- Low collector saturation voltage
(VCE（sat）<0.7Vmax；IC=150m A、IB=15m A)
APPLICATION
Switching, Small type motor drive
2.8 1.90 0.95 0.95
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
0.65 1.5 0.65
UNIT：mm
①
②
③
1.1 0.8 0～0.1 0.13
MAXIMUM RATING（Ta=25℃）
SYMBOL
PARAMETER
VCBO Collector to Base voltage
VEBO
Emitter to Base voltage
VCEO
Collector to Emitter voltage
Collector current
Collector dissipation(Ta=25℃)
Tj
Junction temperature
Tstg
Storage temperature
Terminal Connector ①：Base ②：Emitter ③：Collector
JEITA:SC-59 JEDEC: Similar to TO-236
RATING 160 5 140 1 200 ＋150
-55～＋150
UNIT V V V A m W ℃...
