INC6017AM1-TH50
DESCRIPTION
INC6017AM1 is a silicon NPN transistor. It is designed with high voltage.
FEATURE
- Small package for easy mounting.
- High voltage VCEO = 160V
- Low voltage VCE(sat) = 0.15V(MAX)
APPLICATION
High voltage switching.
2.0 1.3 0.65 0.65
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
AEC-Q101 pliance
OUTLINE DRAWING
UNIT：mm
2.1 0.425 1.25 0.425
①
②
③
0.9 0.7 0～0.1 0.15
MAXIMUM RATING（Ta=25℃）
SYMBOL
VCBO VEBO VCEO I CM IC PC
Tj Tstg
PARAMETER
Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Peak collector current Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature
Terminal Connector ①：Base ②：Emitter ③：Collector
JEITA：SC-70 JEDEC：-
RATING
180 6 160 200 100 200 ＋150 -55～＋150
UNIT
MARKING
V m A m A m W
C W-
℃
℃
Type name
ELECTRICAL CHARACTERISTICS（Ta=25℃）
SYMBOL
PARAMETER...
