INJ0312AC1-T150
DESCRIPTION
INJ0312AC1 is a Silicon P-channel MOSFET. This product is most suitable for use such as portable machinery, because of low voltage drive and low on resistance.
High Speed Switching Silicon P-channel MOSFET
AEC-Q101 PLIANCE
OUTLINE DRAWING
UNIT：ｍｍ
2.8 1.9 0.95 0.95
FEATURE
- Input impedance is high, and not necessary to consider a drive electric current.
- High drain current ID=-1.1A
- Drive voltage -4.0V
- Low on Resistance.
RDS(on)=400mΩ(＠VGS=-4.5V) TYP. RDS(on)=350mΩ(＠VGS=-10V) TYP.
- High speed switching.
- Small package for easy mounting.
1.1 0.8 0～0.1
①
②
③
APPLICATION Switching
MAXIMUM RATINGS（Ta=25℃）
Symbol VDSS VGSS
ID IDP PD
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current(DC) Drain current(Pulse) ※1 Total Power Dissipation ※2
Rating Unit
-50
±20
-1.1
-4.0
500 m...
