INK0012AM1-T150
DESCRIPTION
OUTLINE DRAWING
INK0012AM1 is a Silicon N-channel MOSFET.
This product is most suitable for use such as portable
0.425 1.25 machinery, because of low voltage drive and low on resistance.
AEC-Q101 PLIANCE
UNIT：ｍｍ
2.0 1.3 0.65 0.65
FEATURE
- Input impedance is high, and not necessary to consider a drive electric current.
- Drive voltage 4V
- Low on Resistance.
RDS(ON)=1.7Ω(TYP) @ID=100m A, VGS=4.0V RDS(ON)=1.0Ω(TYP) @ID=100m A, VGS=10V
- High speed switching.
- Small package for easy mounting.
APPLICATION
High speed switching , Analog switching
0.9 0.7 0～0.1 0.15
①
②
③
JEITA：SC-70 JEDEC：TERMINAL CONNECTOR ①：Gate ②：SOURCE ③：DRAIN
MAXIMUM RATING（Ｔａ＝２５℃）
SYMBOL VDSS VGSS ID IDP PD
PARAMETER Drain-source voltage Gate-source voltage Drain current(DC) Drain current(Pulse) ※1 Total power dissipation
RATING 30
±20 200 400 200
UNIT V V m A m A m W
Tch
Channel temperature
+150
℃
Tstg
Range of Storage temperature -55～+150 ℃
※1：Pw≦10μs, Duty cycle≦1%
EQUIVAL...
