INK0210AP1
DESCRIPTION
INK0210AP1 is a Silicon N-channel MOSFET. This product is most suitable for use such as portable machinery, because of low voltage drive and low on resistance.
FEATURE
- Input impedance is high, and not necessary to consider a drive electric current.
- High drain current ID=2A
- Drive voltage 4V
- Low on Resistance. RDS(on)=0.3Ω(TYP).
- High speed switching.
- Small package for easy mounting.
APPLICATION Switching
MAXIMUM RATINGS（Ta=25℃）
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
±20
Drain Current(DC)
Drain Current(Pulse) ※1
Total Power Dissipation
500 m W
Channel Temperature
Tch
+150
℃
Storage Temperature
Tstg
-55～+150 ℃
※1：Pw≦10μs, Duty cycle≦1%
OUTLINE DRAWING 4.4...
