ISA1989AU1-T150
FEATURE
- Super mini package resin sealed silicon PNP epitaxial type transistor.
- Excellent linearity of DC forward current gain
- Small collector to emitter saturation voltage VCE(sat)=-0.3Vmax
APPLICATION
- For small type machine low frequency voltage Amplify application.
1.7 1.0 0.5 0.5
0.22 0.32
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
OUTLINE DRAWING
AEC-Q101 pliance UNIT:mm
1.5 0.35 0.8 0.35
①
②
③
0.7 0.55 0～0.1 0.12
TERMINAL CONNECTER ①：BASE ②：EMITTER ③：COLLECTOR
JEITA：SC-75A
JEDEC：-
MAXIMUM RATINGS（Ta=25℃）
Parameter Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation Junction temperature Storage temperature
Symbol VCBO VEBO VCEO ＩC PC Tj Tstg
Ratings -60 -6 -50 -150 150 +150
-55～+150
UNIT V V V m A m W ℃ ℃
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Symbol
Test conditions
Collector to Emitter Breakdown voltage
V（BR）CEO
IC=-100μA，RBE=∞
Collector cut off...
