ISC6053AM1 Datasheet | Isahaya Electronics Corporation

FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION ISC6053AM1 is a silicon NPN epitaxial type transistor Designed with high collector current, low VCE(sat). FEATURE - High collector current IC（MAX）=650mA - Low collector to emitter saturation voltage VCE（sat）<0.5Vmax 2.0 1.3 0.65 0.65 OUTLINE DRAWING 2.1 0.425 1.25 0.425 Unit：mm ① ②③ 0.9 0.7 0～0.1 0.15 APPLICATION For switching application, small type motor drive application. TERMINAL CONNECTOR ①：BASE ②：EMITTER ③：COLLECTOR JEITA：SC-70 JEDEC： － MAXIMUM RATINGS（Ta=25℃） Symbol Parameter VCEO Collector to Emitter voltage VCBO Collector to Base voltage VEBO Emitter to Base...