RT1N141C-T150
FEATURE
- Built-in bias resistor (R1=10kΩ,R2=10kΩ)
- Mini package for easy mounting
APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit.
Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
AEC-Q101 pliance
OUTLINE DRAWING
2.8 0.65 1.5
UNIT：mm
①
②
③
2.8 1.90 0.95 0.95
Equivalent circuit
R1 B (IN)
R2
C (OUT)
E (GND)
1.1 0.8 0～0.1 0.13
Terminal Connector ①：Base ②：Emitter ③：Collector
JEITA：SC-59 JEDEC：Similar to TO-236
MAXIMUM RATING（Ta=25℃）
SYMBOL
PARAMETER
VCBO Collector to Base voltage
VEBO Emitter to Base voltage
VCEO Collector to Emitter voltage
VIN Input voltage
Collector current
ICM Peak Collector current
PC Collector dissipation
Tj
Junction temperature
Tstg Storage temperature
RATING 50 10 50 40 100 200 200 +150
-55～+150
UNIT V V V V m A m A m W ℃...
