Datasheet Summary
RT3K66M posite Transistor For high speed switching Silicon N-channel MOSFET
DESCRIPTION
RT3K66M is a posite transistor built with two INK0012AX chips in SC-88 package.
OUTLINE DRAWING
2.1 1.25
Unit：mm
FEATURE
- Input impedance is high, and not necessary to consider a drive electric current.
0.425 ① 2.1 1.3 0.65 0.65 ② ③
0.425 ⑥ ⑤ ④ 0.23 0.13
- Drive voltage 4V
- Low on Resistance. RDS(ON)=1.7Ω(TYP) @ID=100mA, VGS=4.0V RDS(ON)=1.0Ω(TYP) @ID=100mA, VGS=10V
- High speed switching.
- Small package for easy mounting.
High speed switching , Analog switching
APPLICATION
0～0.1
⑥
Tr.1
⑤
④
TERMINAL CONNECTOR ①：SOURCE1 ②：GATE1 ③：DRAIN2 ④：SOURCE2 ⑤：GATE2 ⑥:DRAIN1...