RTE21N3M Description
RTE21N3M is a posite transistor built RT1N441 and Zener diode (Vz=18V) in SC-88 package. Use of this product enables miniaturization of equipment and reduction parts and process.
RTE21N3M is Silicon NPN Epitaxial Type Transistor manufactured by Isahaya Electronics Corporation.
RTE21N3M is a posite transistor built RT1N441 and Zener diode (Vz=18V) in SC-88 package. Use of this product enables miniaturization of equipment and reduction parts and process.