Datasheet Summary
DIP-GAM
PRELIMINARY
＜Dual-In-Line Package Gate Amp Module＞
DRIVER FOR IGBT MODULES
Features
-Low height, DIP structure -Isolated gate signal by pulse transformer -Corresponding to gate signal ON Duty 100% -Dual gate drive circuits -Built in isolated DC-DC converter for gate drive -Built in short circuit protection with soft gate shut down -Adjustable fall time on activity of short circuit protection -Output peak gate current is +/-20A(max) -Isolation voltage is 4000Vrms (for 1 minute) -CMOS patible input interface (Input low active type) -Low voltage lock out for gate power supply(VCC)
TARGETED IGBT MODULES
VCES = 600V series up to 600A class VCES = 1200V...