iT2001P
iT2001P is 1 to 20 GHz medium gain high-power amplifier manufactured by Iterra.
i T2001P 1 to 20 GHz Medium Gain High-Power Amplifier
Description
The i T2001P is a broadband packaged amplifier designed for high output power applications. It provides saturated output power of 1 W up to 7 GHz and greater than 29 d Bm up to 14 GHz. Typical gain of 13 d B is provided across the bandwidth. DC power consumption of 5.4 W is obtained in bias condition for best output power and good linear performance. Input and output ports are DC coupled. The i T2001P is fabricated using p HEMT technology with MBE, Ti-Pt-Au gate metallization, silicon nitride passivation, and polymide for scratch protection. Full passivation of the active area and above air bridges provides very high reliability. The package base is made of copper to minimize thermal resistance while also ensuring patibility between materials. The feedthroughs are realized on a ceramic frame to achieve excellent broadband performance.
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Features
Bandwidth: 1 GHz
- 20 GHz Psat (1 GHz
- 7 GHz): 30 d Bm nominal Psat (7 GHz
- 14 GHz): > 29 d Bm nominal Psat (14 GHz
- 20 GHz): > 26 d Bm nominal Gain: 13 d B nominal DC bias conditions: 9 V at 600 m A Ceramic flange-mount package
Absolute Maximum Ratings
(1. bination of positive supply voltage and supply current per stage (Vd1 x Id1) shall not exceed 50% of maximum total power dissipation (5 W)
Symbol
Vd1 Vd2 Vg21 and Vg22 Vd1- Vg11 Vd2
- Vg12 Vg11 Id1 Id2 Ig1 Pin Pdiss_DC Tch Tm Tst
Parameters/conditions
Power supply voltage first stage (1) Positive supply voltage second stage Positive supply voltage (gate) Gate to drain voltage Gate to drain voltage Negative supply voltage Positive supply current first stage
(1) (1)
Min.
Max.
11 11
Units
-3
5 12 12
V V m A m A m A d Bm W °C °C °C
-2
0 800 800 3.2 21 10 150 320
Positive supply current second stage (1) Negative supply current RF input power Total DC power dissipation (no RF) Operating channel temperature Mounting temperature (30 s) Storage temperature...
